FinFET device

ABSTRACT

The present disclosure provides many different embodiments of a FinFET device that provide one or more improvements over the prior art. In one embodiment, a FinFET includes a semiconductor substrate and a plurality of fins having a first height and a plurality of fin having a second height on the semiconductor substrate. The second height may be less than the first height.

PRIORITY DATA

This application is a continuation application of U.S. application Ser.No. 14/248,403, filed Apr. 9, 2014 which is a continuation applicationof U.S. application Ser. No. 13/490,108, filed Jun. 6, 2012, issued Apr.15, 2014 as U.S. Pat. No. 8,697,515 each of which is hereby incorporatedby reference in its entirety.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs where each generation has smaller andmore complex circuits than the previous generation. In the course of ICevolution, functional density (i.e., the number of interconnecteddevices per chip area) has generally increased while geometry size(i.e., the smallest component (or line) that can be created using afabrication process) has decreased. This scaling down process generallyprovides benefits by increasing production efficiency and loweringassociated costs.

Such scaling down has also increased the complexity of processing andmanufacturing ICs and, for these advances to be realized, similardevelopments in IC processing and manufacturing are needed. For example,a three dimensional transistor, such as a fin-like field-effecttransistor (FinFET), has been introduced to replace a planar transistor.The fin transistor has a channel (referred to as a fin channel)associated with a top surface and opposite sidewalls. The fin channelhas a total channel width defined by the top surface and the oppositesidewalls. Although existing FinFET devices and methods of fabricatingFinFET devices have been generally adequate for their intended purposes,they have not been entirely satisfactory in all respects. For example, avariation of fin width and profile, especially at an end of the fin,raises challenges in a FinFET process development. It is desired to haveimprovements in this area.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a flow chart of an example method for fabricating a FinFETdevice according to various aspects of the present disclosure.

FIGS. 2A, 2B-1, 2B-2, 2B-3, 3, 4, 5, and 6 illustrate cross sectionalviews of one embodiment in various stages of fabricating a FinFET deviceconstructed according to aspects of the present disclosure.

FIG. 7 is another flow chart of another example method for fabricating aFinFET device according to various aspects of the present disclosure.

FIGS. 8, 9, 10, and 11 a illustrate cross sectional views of oneembodiment in various stages of fabricating a FinFET device constructedaccording to aspects of the present disclosure.

FIG. 11b is a top view of a FinFET device according to various aspectsof the present disclosure.

FIG. 11c illustrates a cross sectional view of a FinFET device alongline 10 c-10 c in FIG. 10 b.

FIG. 11d illustrates a cross sectional view of a FinFET device alongline 10 d-10 d in FIG. 10 b.

FIG. 12 illustrates a cross sectional view of various aspects of oneembodiment in various stages of fabricating a FinFET device constructedaccording to aspects of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Examples of devices that can benefit from one or more embodiments of thepresent application are semiconductor devices. Such a device, forexample, is a FinFET device. The FinFET device, for example, may be acomplementary metal-oxide-semiconductor (CMOS) device comprising aP-type metal-oxide-semiconductor (PMOS) FinFET device and a N-typemetal-oxide-semiconductor (NMOS) FinFET device. The following disclosurewill continue with a FinFET example to illustrate various embodiments ofthe present application. It is understood, however, that the applicationshould not be limited to a particular type of device, except asspecifically claimed.

With reference to FIGS. 1 and 2-6, a method 100 and a FinFET device 200are collectively described below. FIG. 1 is a flow chart of a method 100for fabricating a FinFET device according to various aspects of thepresent disclosure.

Referring to FIGS. 1 and 2, the method 100 begins at step 102 byproviding a semiconductor substrate 210. The semiconductor substrate 210includes silicon. Alternatively, the semiconductor substrate 210 mayinclude germanium, silicon germanium, gallium arsenide or otherappropriate semiconductor materials. Also alternatively, thesemiconductor substrate 210 may include an epitaxial layer. For example,the semiconductor substrate 210 may have an epitaxial layer overlying abulk semiconductor. Further, the semiconductor substrate 210 may bestrained for performance enhancement. For example, the epitaxial layermay include a semiconductor material different from that of the bulksemiconductor, such as a layer of silicon germanium overlying bulksilicon or a layer of silicon overlying bulk silicon germanium. Suchstrained substrate may be formed by selective epitaxial growth (SEG).Furthermore, the semiconductor substrate 210 may include asemiconductor-on-insulator (SOI) structure. Also alternatively, thesemiconductor substrate 210 may include a buried dielectric layer, suchas a buried oxide (BOX) layer, such as that formed by separation byimplantation of oxygen (SIMOX) technology, wafer bonding, SEG, or otherappropriate method.

The method 100 proceeds to step 104 by defining a plurality of fins onthe semiconductor substrate 210, as shown in FIG. 2. In the depictedembodiment, a pad layer 218 is formed on the substrate 210. The padlayer 218 includes a dielectric material, such as silicon oxide, siliconnitride, silicon oxynitride, or any other suitable dielectric material.The pad layer 218 may be a single layer or multiple layers. In thepresent embodiment, the pad layer 218 is a dual layer that includes asilicon oxide layer 220 deposited on the semiconductor substrate 210 anda silicon nitride layer 222 deposited on the silicon oxide layer 220.The pad layer 218 can be formed by thermal oxidation, chemicaloxidation, atomic layer deposition (ALD), or any other appropriatemethod.

Referring also to FIG. 2A, 2B-1, 2B-2, 2B-3, a lithography processdefines fins on the semiconductor substrate 210. In the presentembodiment, a patterned photoresist layer 230 is spin-on coated on thepad layer 218. The patterned photoresist layer 230 defines fins of theFinFET device 200. Generally, a patterning process may includephotoresist coating (e.g., spin-on coating), soft baking, mask aligning,exposing, post-exposure baking, developing the photoresist, rinsing,drying (e.g., hard baking), other suitable processes, or combinationsthereof. Alternatively, the photolithography exposing process isimplemented or replaced by other proper methods such as masklessphotolithography, electron-beam writing, direct-writing, and/or ion-beamwriting.

Referring to FIGS. 1 and 3, the method 100 proceeds to step 106 byperforming a trench etching to form a fin structure 235 in thesemiconductor substrate 210. The patterned photoresist layer 230 is usedas a mask during the trench etching. In the trench etching, the padlayer 218 and the semiconductor substrate 210 may be etched by variousmethods, including a dry etch, a wet etch, or a combination of dry etchand wet etch. The dry etching process may implement fluorine-containinggas (e.g., CF4, SF6, CH2F2, CHF3, and/or C2F6), chlorine-containing gas(e.g., Cl2, CHCl3, CCl4, and/or BCl3), bromine-containing gas (e.g., HBrand/or CHBR3), oxygy-containing gas, iodine-containing gas, othersuitable gases and/or plasmas, or combinations thereof. The etchingprocess may include a multiple-step etching to gain etch selectivity,flexibility and desired etch profile.

Referring to FIG. 3, the fin structure 235 includes dummy fins 240 andactive fins 250. The dummy fins 240 have no functionality in the FinFETdevice 200 but make FinFET processes more uniform, more reproducible andmore manufacturable. The active fins 250 have functionality in theFinFET device 200. The active fins 250 are disposed between the dummyfins 240. Having the dummy fins 240 located next to the active fins 250,each of the active fins 250 may be formed under a fairly similarformation surrounding in all associated locations. The formationsurrounding may include the dimension of open spacing on both side of afin and local feature density. A consistent formation surroundingenhances uniform active fins 250 in all associated locations, in term offin's critical dimension (CD), profile and height.

Referring to FIGS. 1 and 4, the method 100 proceeds to step 108, where apatterned photoresist layer 270 is formed to define groups of dummy fins240. By the patterning process, the dummy fins 240 are divided into afirst group of dummy fins 240 a and a second group of dummy fins 240 b,as shown in FIG. 4. The groups of dummy fins 240 a and 240 b may includeone dummy fin or multiple dummy fins. The first group of dummy fins 240a is exposed within openings of the patterned photoresist layer 270 andwill be exposed to a subsequent etching process. The second group ofdummy fins 240 b is covered by the patterned photoresist layer 270 (thepatterned photoresist layer 270 also covers the active fins 250), suchthat the second group of dummy fins 240 b (and the active fins 250)remains intact during a subsequent etching process. Additionally, in thedepicted embodiment, before forming the patterned photoresist layer 270,a layer 260 is formed on the semiconductor substrate 210 and fills intrenches between the fins of the fin structure 235. The layer 260comprises any suitable material and is formed by any suitable process.For example, the layer 260 may include various organic or inorganicmaterials. The photoresist layer 270 is coated on the layer 260 andpatterned by a suitable patterning process.

Referring to FIGS. 1 and 5, the method 100 proceeds to step 110 byremoving the first group of dummy fins 240 a, which is exposed withinopenings of the patterned photoresist layer 270. In the depictedembodiment, the first group of dummy fins 240 a and the layer 260 areremoved to form a plurality open-spacing 280, as shown in FIG. 5. Theopen-spacing 280 is formed between the active fins 250 and the secondgroup of dummy fins 240 b. In one embodiment, the open-spacing 280 isformed also between two active fins 250. The first group of dummy fins240 a is removed by an etching technique, such as a dry etch in achemistry with fluorine-containing gases. In one embodiment, the firstgroup of dummy fins 240 a is removed partially. In another embodiment,the first group of dummy fins 240 a is removed completely. After etchingthe first group of dummy fins 240 a, the patterned photoresist layer 270and the layer 260 are removed by another etching process including a wetetch, a dry etch, or a combination thereof. The open-spacing 280 isdesigned to serve as a stress buffer during downstream shallow trenchisolation (STI) formation and reduce distortion of the active fins 250caused by the stress. The second group of dummy fins 240 b is designedto minimize process loading effect and reduce process variations.

Referring to FIGS. 1 and 6, the method 100 proceeds to step 112 byfilling trenches between fins with a dielectric material to form STIregions 290 on the semiconductor substrate 210. The STI regions 290comprises silicon oxide, silicon nitride, silicon oxynitride, othersuitable materials, or combinations thereof. The STI region 290 isformed by any suitable process. As one example, the STI regions 290 isformed by filling the trench between fins with one or more dielectricmaterials by using a chemical vapor deposition (CVD). In some examples,the filled trench may have a multi-layer structure such as a thermaloxide liner layer filled with silicon nitride or silicon oxide. Anannealing process may be performed after the formation of the STI region290.

After forming the STI region 290, the FinFET device 200 may undergofurther CMOS or MOS technology processing to form various features andregions known in the art. For example, further fabrication processes mayinclude, among other things, forming a gate structure over thesemiconductor substrate 210, including over a portion of the active fins250 and the second group of dummy fins 240 b and forming source anddrain (S/D) regions on each side of the gate structure, includinganother portion of the active fins 250 and the second group of dummyfins 240 b. The formation of the gate structure may include depositing,patterning, and etching processes. A gate spacer may be formed on thewalls of the gate structure by deposition and etching techniques. S/Dregions may be formed by recess, epitaxially growing and implanttechniques. Additional steps can be provided before, during, and afterthe method 100, and some of the steps described can be replaced oreliminated for other embodiments of the method.

Subsequent processing may also form various contacts/vias/lines andmultilayer interconnect features (e.g., metal layers and interlayerdielectrics) on the semiconductor substrate 210, configured to connectthe various features or structures of the FinFET device 200. Forexample, a multilayer interconnection includes vertical interconnects,such as conventional vias or contacts, and horizontal interconnects,such as metal lines. The various interconnection features may implementvarious conductive materials including copper, tungsten, and/orsilicide. In one example, a damascene and/or dual damascene process isused to form a copper related multilayer interconnection structure.

In another embodiment, a method 300 for fabricating a FinFET device 400is provided. With reference to FIGS. 7 and 8-11 d, the method 300 andthe FinFET device 400 are collectively described below. FIG. 7 is a flowchart of the method 300 for fabricating the FinFET device 400 accordingto various aspects of the present disclosure.

Referring to FIGS. 7 and 8-9, the method 300 begins at block 302 where aFinFET precursor 405 is received. The FinFET precursor 405 includes thesemiconductor substrate 210 and a fin structure 410 that includes dummyfins 420 and active fins 430. The fin structure 410 is formedsubstantially similar as the fin structure 235 described with referenceto FIGS. 2 and 3, such that the active fins 430 experience a consistentformation surrounding during fin formation and gains a uniform fin's CD,profile and height in all associated locations.

Referring also to FIG. 8, the FinFET precursor 405 also includesisolation regions 440 in the semiconductor substrate 210. The isolationregions 440 utilize isolation technology, such as STI, to define andelectrically isolate various regions of the FinFET device 400. Theisolation regions 440 comprise silicon oxide, silicon nitride, siliconoxynitride, or other suitable materials, or combinations thereof. Theisolation regions 440 are formed by any suitable process. In the presentembodiment, a plurality of trenches between fins is filled with siliconoxide on the semiconductor substrate 210 to form the isolation regions440. An annealing process may be performed after the formation of theisolation regions 440. The annealing process includes rapid thermalannealing (RTA), laser annealing processes, or other suitable annealingprocesses. A chemical mechanical polishing (CMP) process may beperformed subsequently to remove excess silicon oxide to provide asubstantially planar surface. Additionally, a portion of fins of thedummy fins 420 and the active fins 430 may be recessed further bysuitable patterning and etching processes known in the art, as shown inFIG. 8.

Referring also to FIG. 8, the FinFET precursor 405 also includes araised source and drains (S/D) structure 470, which is formed onportions of the dummy fins 420 and the active fins 430, referred to asS/D regions. The raised S/D structure 470 may be formed by one or moreepitaxy or epitaxial (epi) processes, such that Si features, SiGefeatures, or other suitable features are formed in a crystalline stateon the recessed surfaces of the dummy fins 420 and the active fins 430in the S/D region. The epitaxy processes include CVD depositiontechniques (e.g., vapor-phase epitaxy (VPE) and/or ultra-high vacuum CVD(UHV-CVD)), molecular beam epitaxy, and/or other suitable processes. Theraised S/D structure 470 may be merged because of close proximity of thedummy fins 420 and the active fins 430.

Referring to FIG. 9, the FinFET precursor 405 also includes gate stacks450 and gate spacers 460 formed over the semiconductor substrate 210,including over (wrapping) a portion of fins of the fin structure 410(referred to as a channel region). The gate stack 450 may include aninterfacial layer (not shown), a gate dielectric layer 452, a gateelectrode layer 453, and a hard mask layer 454. It is understood thatthe gate stack 450 may comprise additional layers such as interfaciallayers, capping layers, diffusion/barrier layers, dielectric layers,conductive layers, other suitable layers, or combinations thereof.

The interfacial layer is formed over the semiconductor substrate 210 andfins, 420 and 430. The interfacial layer includes silicon oxide, siliconoxynitride or any suitable materials. The gate dielectric layer 452 isformed over the interfacial layer. The gate dielectric layer 452comprises a dielectric material, such as silicon oxide, silicon nitride,silicon oxynitride, high-k dielectric material, other suitabledielectric material, and/or combinations thereof. Examples of high-kdielectric material includes HfO2, HfSiO, HfSiON, HfTaO, HfTiO, HfZrO,zirconium oxide, aluminum oxide, hafnium dioxide-alumina (HfO₂—Al₂O₃)alloy, other suitable high-k dielectric materials, or combinationsthereof.

The gate electrode layer 453 is formed over the gate dielectric layer452. The gate electrode layer 453 includes any suitable material, suchas polysilicon, aluminum, copper, titanium, tantalum, tungsten,molybdenum, tantalum nitride, nickel silicide, cobalt silicide, TiN, WN,TiAl, TiAlN, TaCN, TaC, TaSiN, metal alloys, other suitable materials,or combinations thereof. The hard mask layer 454 is formed over the gateelectrode layer 453. The hard mask layer 454 comprises any suitablematerial, for example, silicon nitride, SiON, SiC, SiOC, or othersuitable material.

The gate stack 450 is formed by any suitable process or processes. Forexample, the gate stack 450 can be formed by a procedure includingphotolithography patterning and etching processes. The gate spacers 460are formed on sidewalls of the gate stack 450 and may comprise adielectric material, such as silicon nitride, silicon carbide, siliconoxynitride, other suitable materials, or combinations thereof. In someembodiments, the gate spacers are used to offset subsequently formeddoped regions, such as source/drain regions. The gate spacers mayfurther be used for designing or modifying the source/drain region(junction) profile. The gate spacers may be formed by suitabledeposition and etch techniques.

Referring to FIGS. 7 and 10, the method 300 proceeds to step 304, wherea patterned photoresist layer 490 is formed to define groups of dummyfins 420. By the patterning process, the dummy fins 420 are divided intoa first group of dummy fins 420 a and a second group of dummy fins 420b, as shown in FIG. 10. The groups of dummy fins 420 a and 420 b mayinclude one dummy fin or multiple dummy fins. The first group of dummyfins 420 a is exposed within openings of the patterned photoresist layer490 and will be exposed to a subsequent etching process. The secondgroup of dummy fins 420 b is covered by the patterned photoresist layer490 (which also covers the active fins 430), such that the second groupof dummy fins 420 b (and the active fins 430) remain intact during thesubsequent etching process. Additionally, in the depicted embodiment,before forming the patterned photoresist layer 490, a layer 480 isformed on the semiconductor substrate 210. The layer 480 comprises anysuitable material and is formed by any suitable process. For example,the layer 480 may include various organic or inorganic materials.Photoresist layer 490 is coated on the layer 480 and patterned by asuitable patterning process.

Referring to FIGS. 7 and 11 a, the method 300 proceeds to step 306 byetching the first group of dummy fins 420 a through openings of thepatterned photoresist layer 490. The first group of dummy fins 420 a isremoved by an etching technique, such as a dry etch in a chemistry withfluorine-containing gases. In the present embodiment, the etchingprocess includes two etching phases. A first phase of the etchingprocess selectively removes the raised S/D structure 470 of the firstgroup of dummy fins 420 a. A second phase of the etching processrecesses a fin height of the first group of dummy fins 420 a throughopenings made by removal of the S/D structure 470. In one embodiment,the first group of dummy fins 420 a is removed partially. In anotherembodiment, the first group of dummy fins 420 a is removed completely.The second phase of the etching process leaves a void 495 on thesemiconductor substrate after recessing the first group of dummy fins420 a. After etching the first group of dummy fins 420 a, the patternedphotoresist layer 490 and the layer 480 are removed by another etchingprocess including a wet etch, a dry etch, or a combination thereof.

FIG. 11b is a top view of the FinFET device 400. Referring to FIG. 11b ,cross section views of the FinFET device 400, after etching the firstgroup of dummy fins 420 a, are taken along three lines, 11 a-11 a, 11c-11 c and 11 d-11 d. FIG. 11a is a cross section view along the line 11a-11 a (along the S/D region) of FIG. 11b . FIG. 11c is a cross sectionview along the line 11 c-11 c (along the channel region) of FIG. 11b andperpendicular to the direction of the line of 11 a-11 a. FIG. 11d is across section view along the line 11 d-11 d (along one of the firstgroup of dummy fins) of FIG. 11b and perpendicular to the direction ofthe line of 11 a-11 a. During the etching process, a portion of thefirst group of dummy fins 420 a having the gate stacks 450 disposedthereover remains intact because of being protected by the hard masklayer 454, as shown in FIGS. 11c and 11 d.

Referring to FIGS. 7 and 12, the method 300 proceeds to step 308 bydepositing and planarizing an interlayer dielectric (ILD) layer 500 onthe semiconductor substrate 210. The ILD layer 500 is deposited by aproper technique, such as CVD. The ILD layer 500 includes a dielectricmaterial, such as silicon oxide, silicon nitride, a low k dielectricmaterial or a combination. The ILD layer 500 fills in the voids 495 onthe semiconductor substrate, formed by removal of the source and drainstructure in the etching process. A CMP process may be performedsubsequently to provide a substantially planar surface of the ILD layer500.

The FinFET device 400 may include additional features, which may beformed by subsequent processing. For example, subsequent processing mayfurther form various contacts/vias/lines and multilayer interconnectfeatures (e.g., metal layers and interlayer dielectrics) on thesubstrate, configured to connect the various features or structures ofthe FinFET device 400. The additional features may provide electricalinterconnection to the device. For example, a multilayer interconnectionincludes vertical interconnects, such as conventional vias or contacts,and horizontal interconnects, such as metal lines. The variousinterconnection features may implement various conductive materialsincluding copper, tungsten, and/or silicide. In one example, a damasceneand/or dual damascene process is used to form copper related multilayerinterconnection structures. In another embodiment, tungsten is used toform tungsten plugs in the contact holes.

The present disclosure provides many different embodiments offabricating a FinFET device that provide one or more improvements overthe prior art. In one embodiment, a method for fabricating a FinFETdevice includes providing a semiconductor substrate, etching thesemiconductor substrate to form a fin structure that includes dummy finsand active fins. A patterned photoresist layer is formed to define afirst group of dummy fins and a second group of dummy fins. The firstgroup of dummy fins is etched through the patterned photoresist layer. Ashallow trench isolation (STI) is formed on the semiconductor substrateafter etching the first group of dummy fins.

In another embodiment, a method for fabricating a FinFET device includesreceiving a FinFET precursor. The FinFET precursor includes asemiconductor substrate, dummy fins and active fins formed on thesemiconductor substrate, shallow trench isolation (STI) regions formedon the semiconductor substrate, a gate stack formed on the semiconductorsubstrate (including a portion of the active and the dummy fins) and asource and drain structure formed on the semiconductor substrate(including another portion of the active and the dummy fins). Apatterned photoresist layer is formed to define a first group of dummyfins and a second group of dummy fins. An etching process is performedto removing a portion of the first group of dummy fins, which having thesource and drain structure, through the patterned photoresist layer.

In yet another embodiment, a method for fabricating a FinFET deviceincludes providing a semiconductor substrate, forming dummy fins andactive fins on the semiconductor substrate, wherein the active fins aredisposed between the dummy fins. A patterned photoresist layer is formedon the dummy fins and the active fins. An etching process is performedto remove the exposed portion of the dummy fins to form an open-spacingbetween the active fins and a remaining portion of dummy fins. A shallowtrench isolation (STI) is formed on the semiconductor substrate afterforming the open-spacing.

Based on the above, it can be seen that the present disclosure offersmethods for fabricating a FinFET device. The method employs a noveldummy fins approach. The dummy fins approach is configured to remove agroup of dummy fins while remain another group of dummy fins before aformation of STI region. Alternatively, the dummy fins approach isconfigured to remove the S/D structure in a S/D region and at same timeremains the gate stack in the channel region of the same group of dummyfin. The dummy fin approach can be flexibly fabricated in differentprocess stages to obtain various benefits of process control. The methoddemonstrates to achieve an uniform of fin's CD, profile and height inall associated locations.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A device comprising: a first fin structuredisposed over a substrate and having a first height over a surface ofthe substrate; a dummy semiconductor structure adjacent the first finstructure and disposed over the substrate, wherein the dummysemiconductor structure has a sidewall extending from the surface of thesubstrate to a second height that is less than the first height; and anisolation structure extending from the first fin structure to the dummysemiconductor structure and at least partially covering a top surface ofthe dummy semiconductor structure, wherein the isolation structureextends continuously from the surface of the substrate to at least thetop surface of the dummy semiconductor structure, the top surface of thedummy semiconductor structure facing away from the substrate.
 2. Thedevice of claim 1, wherein the isolation structure includes amulti-layer structure having at least one liner layer.
 3. The device ofclaim 1, further comprising: a second fin structure disposed over thesubstrate, wherein the dummy semiconductor structure interposes thefirst fin structure and the second fin structure.
 4. The device of claim3, wherein the isolation structure extends from the first fin structureto the second fin structure.
 5. The device of claim 1, wherein theisolation structure directly interfaces the sidewall extending from thesurface of the substrate to the second height and a top surface of thedummy semiconductor structure.
 6. The device of claim 1, furthercomprising: a second fin structure disposed over the substrate adjacentthe first fin structure; and a merged source/drain feature disposed overthe first and second fin structures.
 7. The device of claim 1, furthercomprising: a second fin structure disposed over the substrate adjacentthe first fin structure; and a single gate structure disposed over thefirst and second fin structures.
 8. A fin-type field effect transistor(FINFET) device comprising: a first fin structure disposed over asubstrate and having a first height over a surface of the substrate; asecond fin structure disposed over the substrate and having the firstheight over the surface of the substrate; at least one residual dummystructure interposing the first and second fin structures, wherein theresidual dummy structure is a protrusion of semiconductor materialhaving a second height over the surface of the substrate, the secondheight less than the first height; and an isolation structure extendingfrom a sidewall of the first fin structure to a sidewall of the secondfin structure and disposed in a space over the at least one residualdummy structure, wherein the isolation structure includes one or moredielectric materials.
 9. The FINFET device of claim 8, furthercomprising: an active fin structure adjacent the first fin structure; afirst gate structure extending over the first and third fin structures;and a second gate structure over the second fin structure, the secondgate structure different than the first gate structure.
 10. The FINFETdevice of claim 8, wherein the isolation structure is a multi-layerisolation structure including more than one dielectric material.
 11. TheFINFET device of claim 10, wherein the isolation structure is a shallowtrench isolation (STI) feature.
 12. The FINFET device of claim 8,wherein the isolation structure entirely covers a top surface of theresidual dummy structure.
 13. The FINFET device of claim 8, wherein theisolation structure directly interfaces with each of an entirety of afirst sidewall of the protrusion; an entirety of a second sidewall ofthe protrusion, the second sidewall opposing the first sidewall; and anentirety of a top surface of the protrusion.
 14. A fin-type field effecttransistor (FINFET) device comprising: first and second active finstructures each having a top surface disposed at a first height over asurface of the substrate; a gate structure extending over the first andsecond active fin structures; a source and drain feature extending overthe first and second active fin structures; a dummy fin structure overthe surface of the substrate, wherein the dummy fin structure includes aprotrusion of semiconductor material extending from the surface of thesubstrate, the protrusion having a top surface disposed at a secondheight over the surface of the substrate, and wherein the second heightis less than the first height; and an isolation structure disposed overthe dummy fin structure, wherein the isolation structure covers the topsurface of the protrusion and extends to a sidewall of the first activefin structure.
 15. The device of claim 14, wherein the isolationstructure includes a liner layer and an insulating layer.
 16. The deviceof claim 14, further comprising: another fin of the first heightdisposed over the substrate, wherein the dummy fin structure interposesthe another fin and the first active fin structure.
 17. The device ofclaim 16, wherein the isolation structure extends continuously from asidewall of the another fin to a sidewall of the first active finstructure.
 18. The device of claim 17, further comprising: another dummyfin structure interposing the another fin and the first active finstructure, wherein the isolation structure continuously extends from thesidewall of the another fin to the sidewall of the first active fin andcovers a top surface of the another dummy fin structure and covers thetop surface of the protrusion.
 19. The device of claim 14, wherein theisolation structure interfaces a portion of the top surface of thesubstrate interposing the first active fin structure and the protrusion.20. The device of claim 14, wherein the first and second active fins,the dummy fin structure, and the substrate comprise a same semiconductormaterial.